Image Sensors at ISSCC 2020

Image Sensors World

ISSCC 2020 to be held in San Francisco on Feb. 16-20 publishes its agenda with heavy emphasis on ToF imaging. The biggest surprise is a joint Prophesee and Sony paper on event-based sensor:

  • A 240×192Pixel 10fps 70klux 225m-Range Automotive LiDAR SoC Using a 40ch 0.0036mm2 Voltage/Time Dual-Data-Converter-Based AFE
    S. Kondo, H. Kubota, H. Katagiri, Y. Ota, M. Hirono, T. T. Ta, H. Okuni, S. Ohtsuka, Y. Ojima, T. Sugimoto, H. Ishii, K. Yoshioka, K. Kimura, A. Sai, N. Matsumoto,
    Toshiba, Japan
  • A 1200×900 6μm 450fps Geiger-Mode Vertical Avalanche Photodiodes CMOS Image Sensor for a 250m Time-of-Flight Ranging System Using Direct-Indirect-Mixed Frame Synthesis with Configurable-Depth-Resolution Down to 10cm
    T. Okino, S. Yamada, Y. Sakata, S. Kasuga, M. Takemoto, Y. Nose, H. Koshida, M. Tamaru, Y. Sugiura, S. Saito, S. Koyama, M. Mori, Y. Hirose, M. Sawada, A. Odagawa, T. Tanaka,
    Panasonic, Nagaokakyo, Japan
  • An Up-to-1400nm 500MHz Demodulated Time-of-Flight Image Sensor on a Ge-on-Si Platform
    C-L. Chen, S-W. Chu, B-J. Chen, Y-F. Lyu, K-C. Hsu, C-F. Liang, S-S. Su, M-J. Yang, C-Y. Chen, S-L. Cheng, H-D. Liu, C-T. Lin, K. P. Petrov, H-W. Chen, K-C. Chu, P-C. Wu, P-T. Huang, N. Na, S-L. Chen,
    Artilux, Hsinchu, Taiwan
  • A Dynamic Pseudo 4-Tap CMOS Time-of-Flight Image Sensor with Motion Artifact Suppression and Background Light Cancelling Over 120klux
    D. Kim, S. Lee, D. Park, C. Piao, J. Park, Y. Ahn, K. Cho, J. Shin, S. M. Song, S-J. Kim, J-H. Chun, J. Choi,
    Sungkyunkwan University, Suwon, Ulsan National Institute of Science and Technology, Ulsan, Korea; Zeeann, Hanam, Korea
  • A 2.1e-Temporal Noise and -105dB Parasitic Light Sensitivity Backside-Illuminated 2.3μm-Pixel Voltage-Domain Global Shutter CMOS Image Sensor Using High-Capacity DRAM Capacitor Technology
    J-K. Lee, S. S. Kim, I-G. Baek, H. Shim, T. Kim, T. Kim, J. Kyoung, D. Im, J. Choi, K. Cho, D. Kim, H. Lim, M-W. Seo, J. Kim, D. Kwon, J. Song, J. Kim, M. Jang, J. Moon, H. Kim, C. K. Chang, J. Kim, K. Koh, H. Lim, J. Ahn, H. Hong, K. Lee, H-K. Kang,
    Samsung Electronics, Hwaseong, Korea
  • A 1/2.65in 44Mpixel CMOS Image Sensor with 0.7µm Pixels Fabricated in Advanced Full-Depth Deep-Trench Isolation Technology
    H. Kim, J. Park, I. Joe, D. Kwon, J. H. Kim, D. Cho, T. Lee, C. Lee, H. Park, S. Hong, C. Chang, J. Kim, H. Lim, Y. Oh, Y. Kim, S. Nah, S. Jung, J. Lee, J. Ahn, H. Hong, K. Lee, H-K. Kang,
    Samsung Electronics, Hwaseong, Korea
  • A 132dB Single-Exposure-Dynamic-Range CMOS Image Sensor with High Temperature Tolerance
    Y. Sakano, T. Toyoshima, R. Nakamura, T. Asatsuma, Y. Hattori, T. Yamanaka, R. Yoshikawa, N. Kawazu, T. Matsuura, T. Iinuma, T. Toya, T. Watanabe, A. Suzuki, Y. Motohashi, J. Azami, Y. Tateshita, T. Haruta,
    Sony Semiconductor, Japan
  • A 0.50erms Noise 1.45μm-Pitch CMOS Image Sensor with Reference-Shared In-Pixel Differential Amplifier at 8.3Mpixel 35fps
    M. Sato, Y. Yorikado, Y. Matsumura, H. Naganuma, E. Kato, T. Toyofuku, A. Kato, Y. Oike,
    Sony Semiconductor Solutions, Atsugi, Japan
  • A 0.8V Multimode Vision Sensor for Motion and Saliency Detection with Ping-Pong PWM Pixel
    T-H. Hsu, Y-K. Chen, J-S. Wu, W-C. Ting, C-T. Wang, C-F. Yeh, S-H. Sie, Y-R. Chen, R-S. Liu, C-C. Lo, K-T. Tang, M-F. Chang, C-C. Hsieh,
    National Tsing Hua University, Hsinchu, Taiwan
  • A 1280×720 Back-Illuminated Stacked Temporal Contrast Event-Based Vision Sensors with 4.86μm Pixels, 1.066GEPS Readout, Programmable Event-Rate Controller and Compressive Data-Formatting Pipeline
    T. Finateu, A. Niwa, D. Matolin, K. Tsuchimoto, A. Mascheroni, E. Reynaud, P. Mostafalu, F. Brady, L. Chotard, F. LeGoff, H. Takahashi, H. Wakabayashi, Y. Oike, C. Posch,
    PROPHESEE, Paris, France,
    Sony Semiconductor Solutions, Atsugi, Japan,
    Sony Electronics, Rochester, NY

Image Sensors World


No Comments

Leave a Reply

Your e-mail address will not be published. Required fields are marked *

Image Sensors World
1/f Noise in CMOS Sensors

A paper “1/f Noise Modelling and Characterization for CMOS Quanta Image Sensors” by Wei Deng and Eric R. Fossum, Dartmouth College belongs to MDPI Special issue on the 2019 International Image Sensor Workshop (IISW2019). The paper presents rather surprising results that match Hooge mobility fluctuation model, largely abandoned by the …

Image Sensors World
Assorted News: CIS Fabs Capacity, Espros, Artilux

China Money Network: “As reported previously, the current CIS is mainly divided into mobile phones and security. Among them, mobile phones are basically manufactured using a 12-inch 55nm process, and security chips are manufactured using a 0.11um eight-inch process. In terms of domestic wafer foundries, SMIC, Huahong Grace and XMC …

Image Sensors World
D-ToF LiDAR Model

A paper “Modeling and Analysis of a Direct Time-of-Flight Sensor Architecture for LiDAR Applications” by Preethi Padmanabhan, Chao Zhang, and Edoardo Charbon, EPFL and TU Delft, belongs to MDPI Special issue on the 2019 International Image Sensor Workshop. “Direct time-of-flight (DTOF) is a prominent depth sensing method in light detection …